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• W2016993859 abstract "A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (IBL/IYL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the IBL/IYL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence." @default.
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• W2016993859 date "2009-07-27" @default.
• W2016993859 modified "2023-10-18" @default.
• W2016993859 title "Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films" @default.
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• W2016993859 doi "https://doi.org/10.1063/1.3187540" @default.
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