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- W2016998935 abstract "Field desorption behavior of Al2O3, Ga2O3, Y2O3, In2O3 and La2O3 samples deposited onto MoCr and HT-activated emitters has been studied as a function of emitter temperature. Among these metal oxides, Ga2O3 and In2O3 behaved as significant metal ion sources, but the others displayed no noticeable ion emission in the temperature zone investigated (500–1700°C). The onset temperature for Ga+ and In+ lay below the melting points of the matrix substances by 1000°C or more, and the ions became more and more abundant with increasing temperature when MoCr emitters were employed. HT-activated emitters provided Ga+ and In+ ions with an intensity which increased less steeply with temperature, so the emission of these metal ions was dependent on emitter material, as well as on emitter temperature. Physical and chemical processes which led to the formation of Ga+ and In+ ions are discussed on the basis of the experimental findings." @default.
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- W2016998935 date "1983-12-01" @default.
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- W2016998935 title "Intense emission of metal ions from gallium oxide in the field desorption mode" @default.
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- W2016998935 doi "https://doi.org/10.1016/0168-1176(83)85032-0" @default.
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