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- W2017002020 abstract "The use of gallium arsenide phosphide for light-emitting diodes and other semiconductor devices has generated a need for a good dielectric passivation technique for this III-V compound. Our development of GaAs 1/2 P 1/2 surface passivation processes has led us to study the thermal growth of films on this ternary III-V compound in oxygen, argon, and nitrogen, as well as the RF sputtering of Al 2 O 3 , SiO 2 , and Si 3 N 4 onto the surface. The thermal growth studies were complicated by the fact that films were grown on the surface even in the inert N 2 or argon atmospheres. This paper describes these processes and characterizes the passivating film quality with respect to physical quality (adherence and uniformity) and electrical quality (dielectric properties and pinhole defects) and its etching properties." @default.
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- W2017002020 date "1971-01-01" @default.
- W2017002020 modified "2023-09-26" @default.
- W2017002020 title "Surface passivation of GaAsP" @default.
- W2017002020 doi "https://doi.org/10.1109/iedm.1971.188391" @default.
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