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• W2017012642 abstract "In-situ electrochemical characterizations together with ex-situ SEM observations have been used to characterize (111)-oriented p-Si surfaces after electrochemical treatments known to lead to H incorporation into the Si lattice. Prolonged cathodic polarization of Si substrates results in surfaces presenting a large number of defects with regular triangular shapes, characteristic of substrate orientation. These observations can be understood if p-Si is etched in 5% HF under cathodic conditions. It can be inferred that etching proceeds by H incorporation into Si, which creates subsurface and surface defects that are preferentially etched through a chemical mechanism, resulting in the appearance of triangular pits." @default.
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• W2017012642 date "2000-11-01" @default.
• W2017012642 modified "2023-09-24" @default.
• W2017012642 title "Pit Formation on p-Si during Hydrogen Evolution in HF Electrolyte" @default.
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• W2017012642 doi "https://doi.org/10.1002/1521-396x(200011)182:1<31::aid-pssa31>3.0.co;2-w" @default.
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