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• W2017015050 abstract "We report on the effects of the wet and dry oxidation processes on the interfacial roughness and time dependent dielectric breakdown (TDDB) characteristics of the poly-Si/SiO2/Si(100) trilayer. The interface roughness of the oxide layers buried under a thick poly-Si electrode has been investigated using an x-ray reflectivity technique. Analysis of x-ray reflectivity data for the trilayer samples and for a bare oxide film shows that interface roughness of poly-Si electrode/SiO2 interfaces depends on oxidation process while oxide layers have smooth SiO2/Si-subtstrate interfaces. TDDB of the SiO2 layer has also been observed to depend on the oxidation process, indicating that the interface roughness is a crucial factor affecting the TDDB characteristics. The wet oxidized SiO2 film is more stable to dielectric breakdown and has smoother interfaces than the dry oxidized sample." @default.
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• W2017015050 date "1998-01-26" @default.
• W2017015050 modified "2023-09-26" @default.
• W2017015050 title "Effects of oxidation process on interface roughness of gate oxides on silicon: X-ray reflectivity study" @default.
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• W2017015050 doi "https://doi.org/10.1063/1.120780" @default.
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