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• W2017019056 abstract "The substantial reductions in anneal times, such as in flash-assist rapid thermal processing (fRTP), place considerably more emphasis on the initial condition of the wafer, which may assume a greater role in the dictating diffusion product (Dt). Investigations have been conducted on the effect of low-temperature preanneals prior to fRTP on the extended defect nucleation and evolution and on boron activation. Czochralski grown n-type silicon wafers are preamorphized with 8 Ge+ ions at a constant dose of 1×1015cm−2 and then implanted with 1keV, 1×1015cm−2 B. Low-temperature furnace anneals are performed at 500°C for 30min and the wafers subsequently subjected to flash-assist RTP anneals in the range 1000–1300°C. Four-point probe measurements indicate that the low-temperature anneal results in higher sheet resistance values. Plan-view transmission electron microscopy, secondary-ion-mass spectrometry, and Hall-effect measurements revealed no substantial differences in defect structure, junction depth, or mobility. However, the carrier density was found to be higher for those wafers which were preannealed." @default.
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• W2017019056 date "2006-01-01" @default.
• W2017019056 modified "2023-10-01" @default.
• W2017019056 title "Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals" @default.
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• W2017019056 doi "https://doi.org/10.1116/1.2140003" @default.
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