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- W2017025116 abstract "We examined the structural properties of Si layers embedded in GaAs and AlAs-GaAs structures by means of X-ray diffraction and transmission electron microscopy to identify growth parameters for the synthesis of Si-GaAs superlattices. We find that localized pseudomorphic Si layers can be obtained by molecular beam epitaxy at 500–540°C up to a thickness of 7–8 monolayers. Fifteen period Si-GaAs(001) superlattices involving Si layers 2–3 monolayer thick were then synthesized using the same growth parameters. X-ray diffraction measurements and Raman spectroscopy studies confirm that pseudomorphic growth and relatively abrupt interfaces were achieved." @default.
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- W2017025116 date "1993-02-01" @default.
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- W2017025116 title "Si-GaAs(001) superlattice structure" @default.
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- W2017025116 doi "https://doi.org/10.1016/0022-0248(93)90590-s" @default.
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