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- W2017046102 abstract "Effectively atomically flat interfaces over a macroscopic area (200 μm o/) have been achieved in GaAs/AlAs quantum wells (QWs) with well widths of 4.8 to 12 nm grown on (411)A GaAs substrates by molecular-beam epitaxy (MBE). A single and very narrow photoluminescence peak (FWHM)=7.7 meV) was observed at 742.6 nm for the QW with a well width of 4.8 nm at 77 K. The linewidth is comparable to that of growth-interrupted QWs grown on (100)-oriented GaAs substrates by MBE. These results indicate that the surface of GaAs and AlAs grown on the (411)A GaAs substrates are extremely flat and stable on the (411)A plane." @default.
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- W2017046102 date "1995-03-01" @default.
- W2017046102 modified "2023-09-26" @default.
- W2017046102 title "Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular-beam epitaxy" @default.
- W2017046102 doi "https://doi.org/10.1116/1.588138" @default.
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