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- W2017065400 abstract "Litho-Etch-Litho-Etch double patterning requires aggressive shrink of each sub-pattern's critical dimensions to enable inter-digitation and pitch doubling. Application of this double patterning technique to elliptical contacts introduces a new constraint to the CD shrink processes as controlling the 2-D aspect ratio of elliptical contacts is critical for both device performance and yield. The impact of a track-applied chemical shrink and reactive ion etch [RIE] shrink processes to pre/post RIE 2-D aspect ratios [2-D AR] have been evaluated. A methodology for controlling 2-D aspect ratios with an aggressive CD shrink target is described using a 2:1 aspect ratio test pattern resulting in the successful fabrication of 2:1 aspect ratio bottom CD contacts with 65% bias from the lithographic CD." @default.
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- W2017065400 date "2010-03-11" @default.
- W2017065400 modified "2023-09-26" @default.
- W2017065400 title "Controlling 2D aspect ratio of elliptical contact level interconnects utilizing spin-on and reactive ion etch critical dimension shrink for the 22-nm node" @default.
- W2017065400 doi "https://doi.org/10.1117/12.846625" @default.
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