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• W2017074998 abstract "Scanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(001) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590 °C, at which a temperature (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620 °C, the areas of the (2×2) and c(4×4) reconstruction surrounded by amorphous regions develop. New defect models for the (2×2) and c(4×4) structures are proposed where alternating arrangements of the buckled dimers together with missing dimer defects are considered." @default.
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• W2017074998 date "1993-04-05" @default.
• W2017074998 modified "2023-09-25" @default.
• W2017074998 title "Observation of solid phase epitaxy processes of Ar ion bombarded Si(001) surfaces by scanning tunneling microscopy" @default.
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• W2017074998 doi "https://doi.org/10.1063/1.108598" @default.
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