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- W2017076168 abstract "In this study, GaN substrates with low-density etch pits were obtained by regrowth on free-standing GaN films (two steps) by hydride vapor-phase epitaxy (HVPE). The etch-pit density was lower than 4×104 cm−2 by atomic-force microscopy. The density is significantly lower than that of the HVPE-grown (one-step) GaN films (HVPE GaN), using sapphire as a substrate. The optical and electrical properties of the two-step HVPE-grown GaN substrates are superior to those of HVPE GaN. Temperature-dependent photoluminescence measurements reveal that thermal quenching behavior of the 2.9 eV band is possibly attributed to a shallow acceptor level at about 118±5 meV above the valence band." @default.
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- W2017076168 date "2002-05-13" @default.
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- W2017076168 title "Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films" @default.
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- W2017076168 doi "https://doi.org/10.1063/1.1480108" @default.
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