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• W2017081105 abstract "The electrostatic potential profile across the p-n junction of an InGaAs light-emitting diode with linearly graded AlGaAs triangular barriers has been measured using off-axis electron holography. Simulations of the junction profile show small discrepancies with experimental measurements in the region of the p-and n-doped AlGaAs barriers, which are located away from the InGaAs quantum wells. Revised simulations reproduce the measurements reasonably when a carrier-trap density of 6×1016cm−3 in the AlGaAs barriers is subtracted from the dopant concentrations. The presence of oxygen impurities is considered as the most likely reason for the reduction in doping efficiency." @default.
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• W2017081105 date "2010-01-01" @default.
• W2017081105 modified "2023-09-29" @default.
• W2017081105 title "Quantitative dopant profiling of p-n junction in InGaAs∕AlGaAs light-emitting diode using off-axis electron holography" @default.
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• W2017081105 doi "https://doi.org/10.1116/1.3244575" @default.
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