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• W2017105613 abstract "The technique of electron cyclotron resonance (ECR) plasma enhanced chemical vapour deposition (PECVD) is increasingly being used in electronic and photonic device applications. ECR offers a number of advantages including improved control of the deposition process, less damage to the growing film and the possibility of high deposition rates. ECR occurs in a plasma under appropriate magnetic and electric field conditions. In most cases, as in our system, this is achieved with a combination of 2.45 GHz microwave radiation and a 0.0875 T magnetic field, due to the use of standardized microwave supplies. We have studied the effects on silicon film growth of changing the magnetic field configuration to produce one or more planes of ECR within the system, and of changing the positions of the plane(s) relative to the deposition substrate. The films were grown in silane-hydrogen discharges. The magnetic field in our system was provided by two electromagnets. It was measured experimentally for a number of operating current values and then a detailed profile achieved by modelling using a proprietary software package. A process condition discharge under identical magnetic field configurations to growth was analysed by the use of a Langmuir probe and the results correlated with film properties determined by Raman spectroscopy and Dektak profilometry." @default.
• W2017105613 created "2016-06-24" @default.
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• W2017105613 date "2001-09-05" @default.
• W2017105613 modified "2023-09-27" @default.
• W2017105613 title "The effects of varying plasma parameters on silicon thin film growth by ECR plasma CVD" @default.
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• W2017105613 doi "https://doi.org/10.1088/0022-3727/34/18/311" @default.
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