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- W2017111824 abstract "GaN nanowires grown by plasma-assisted molecular beam epitaxy are of excellent optical quality, their optical signature being characteristic of homogeneous strain-free GaN. There are however discrepancies between the low temperature luminescence spectra of GaN thin films and nanowires, in particular, a strong emission line around 3.45 eV in nanowires is not found with such a large intensity in thin film GaN. The origin of this emission line in nanowires is still debated; in this article, we shed new light on this debate notably by polarization-resolved luminescence and magneto-luminescence experiments. Our findings demonstrate, in particular, that this line cannot be attributed to a two-electron satellite of the donor bound exciton transition." @default.
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- W2017111824 date "2013-01-28" @default.
- W2017111824 modified "2023-09-25" @default.
- W2017111824 title "Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires" @default.
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- W2017111824 doi "https://doi.org/10.1063/1.4775492" @default.
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