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- W2017147851 abstract "PROGRAMMABLE read-only memories (PROMs) have been available for several years. Previous fused-link PROMSs ^1,2 have used bipolar technology with its accompanying high power dissipation. MOS PROMs have used charge storage in dualdielectric^3 or floating-gate structures. The operating range of these memories is limited by charge loss at elevated temperature^5,6.. This paper will describe a fused-link CMOS PROM which overcomes these earlier limitations. The basic features are summarized in Table I." @default.
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- W2017147851 date "1977-01-01" @default.
- W2017147851 modified "2023-09-25" @default.
- W2017147851 title "A 1024-bit, fused link CMOS PROM" @default.
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- W2017147851 doi "https://doi.org/10.1109/isscc.1977.1155652" @default.
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