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- W2017149344 abstract "The authors report photoluminescence measurements made on highly strained nominally GaAs/GaSb/GaAs heterostructures (grown by MOVPE) at pressures up to 5.5 GPa in a diamond anvil cell. Two samples have been studied, a single 15 AA GaSb layer, and a five 15 AA GaSb layer heterostructure. In both cases the 1.3 eV strained layer luminescence increased in energy with pressure with a large pressure coefficient. This identifies the transition as one involving a Gamma state in the conduction band. It is suggested that lower energy luminescence, observed only from the five-layer sample, involves a defect. A theoretical model predicts that the bands line up in a type-II configuration, and the observed behaviour at pressures beyond the GaAs Gamma -X crossover confirms this. The possibility of incorporation of As atoms in the thin nominally GaSb layer is considered." @default.
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- W2017149344 date "1991-06-01" @default.
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- W2017149344 title "Photoluminescence at high pressures from highly strained MOVPE grown GaAs/GaSb/GaAs heterostructures" @default.
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- W2017149344 doi "https://doi.org/10.1088/0268-1242/6/6/022" @default.
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