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• W2017156220 abstract "The authors demonstrate high quality factor GaAs-based L9 photonic crystal microcavities (PCMs) with embedded InAsSb quantum dots with emission in 1.3 μm at room temperature. The fabrication process uses reactive ion beam etching with a CHF3/N2 gas mixture and reactive ion etching with a BCl3/N2 gas mixture to form PCMs on air-suspended slabs. An optimum N2 partial flux content of 0.65 and a successful removal of deposits formed during the membrane release by a fast wet etching in HF provide optical quality factors (Q-factors) as high as ∼30 000." @default.
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• W2017156220 date "2013-12-04" @default.
• W2017156220 modified "2023-09-26" @default.
• W2017156220 title "Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching" @default.
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• W2017156220 doi "https://doi.org/10.1116/1.4836517" @default.
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