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- W2017187595 abstract "Rh4Si5 formation occurs by two different mechanisms, depending on the film geometry. Thermal annealing of a Rh film on a silicon substrate results in the formation of Rh4Si5 at about 850 °C by a process described as ‘‘nucleation controlled.’’ Alternatively, when the film consists of thin Rh/Si multilayers, Rh4Si5 can form at room temperature in a very rapid, self-sustaining fashion that is the chemical-reaction analog of the explosive crystallization process. This mechanism of explosive silicide formation, reported recently for the first time [J. A. Floro, J. Vac. Sci. Technol. A 4, 631 (1986)], apparently occurs in the multilayer geometry due to the large driving forces and reduced diffusion lengths associated with this configuration." @default.
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- W2017187595 title "Rh4Si5formation in the multilayer geometry: Explosive reaction versus nucleation‐controlled kinetics" @default.
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- W2017187595 doi "https://doi.org/10.1063/1.340452" @default.
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