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• W2017187907 abstract "Gallium nitride films were grown by reactive rf magnetron sputtering on sapphire substrates. Crystalline (112&#x0304;0) GaN films were obtained on (011&#x0304;2) sapphire at substrate temperatures between 640 and 680°C. High N2 partial pressures are required to crystallize the GaN films. Nitrogen incorporation and crystal quality of GaN films are examined as a function of substrate temperature and nitrogen partial pressure. Band gaps of 3.4 eV, and photoluminescence peaks as narrow as 11 meV are reported for sputtered GaN films." @default.
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• W2017187907 date "1991-11-01" @default.
• W2017187907 modified "2023-10-03" @default.
• W2017187907 title "High-quality GaN grown by reactive sputtering" @default.
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• W2017187907 doi "https://doi.org/10.1016/0167-577x(91)90001-m" @default.
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