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• W2017205843 abstract "The formation of phases due to interactions in the Pd/Si and Pd/Ge thin film systems was studied by means of X-ray diffractometry and 4He+ ion backscattering. The films were annealed at temperatures well below the melting points of the phases. The sequences of phase formation were determined. In the initial stage of compound formation, where unreacted palladium and silicon or germanium layers are present, the phases Pd2Si and Pd2Ge were detected. After annealing for longer times and at higher temperatures different compound sequences were determined. When the thickness of the palladium layer was larger than that of the silicon or thegermanium film, more and more palladium-rich phases were detected. Phases rich in the semiconductor were formed in samples prepared with an excess of the semiconductor material. The sequences cannot be interpreted on the basis of purely thermodynamic or kinetic arguments and a composite mechanism is proposed." @default.
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• W2017205843 date "1981-03-01" @default.
• W2017205843 modified "2023-09-26" @default.
• W2017205843 title "Compound formation kinetics in the Si/Pd and Ge/Pd systems" @default.
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• W2017205843 doi "https://doi.org/10.1016/0040-6090(81)90324-2" @default.
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