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• W2017208057 abstract "The interface structures and electrical interface properties near the conduction band edge (CBE) of Ge metal–insulator–semiconductor (MIS) capacitors with Si or GeO 2 interfacial layers (ILs) were systematically investigated using physical analysis and the Gray–Brown (GB) method. The accuracy of the values of interface trap density ( D it ) obtained by the GB method was confirmed by comparing these with the values obtained by the conductance method. The GB method revealed that Ge MIS capacitors with a Si IL have a large number of interface traps near the CBE, and that the dislocations introduced at a Si IL/Ge interface have an insignificant effect on D it near CBE. On the other hand, the D it of the GeO 2 IL capacitors was lower by almost one order of magnitude than that of the Si IL capacitors. In addition, the D it of the GeO 2 IL/Ge interface was also reduced by high-temperature oxidation during post metallization annealing. These results indicate that ILs have a strong influence on D it near the CBE, and that the GeO 2 IL and high-temperature oxidation are quite effective in reducing D it near the CBE." @default.
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• W2017208057 date "2010-04-01" @default.
• W2017208057 modified "2023-10-01" @default.
• W2017208057 title "Effect of Ge Metal–Insulator–Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge" @default.
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• W2017208057 doi "https://doi.org/10.1143/jjap.49.04da09" @default.
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