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- W2017214160 abstract "This paper describes growth process of the two silicide Sub-nanometer devices and the different effects of having cobalt silicide and titanium silicide on a Sub-nanometer CMOS devices. On the top of CMOS device gate, metal silicide is developed on-top of the polysilicon to produce an ohmic contact between the polysilicon and aluminum wire. The ohmic contact should be better compared to metal-polysilicon borders. This silicide has been widely used to reduce resistance of polysilicon gates. Metal silicides such as titanium silicide (TiSi 2 ), tungsten salicide (WSi 2 ), cobalt salicide (CoSi 2 ) andnickel salicide (NiSi 2 ) are widely used for this purpose. These metals react with polysilicon, to form metal silicide layer that possesses better physical and electrical properties to interface with aluminium. The silicide need to be optimally annealed in order to obtain a good ratio of metal silicide to silicon in the gate structure Titanium silicide is formed by depositing PVD Ti on silicon substrates followed by annealing process. Anneals were carried out in an N2 ambient and resulted in a thin TiN layer on the silicide surface. For cobalt cilicide, a CVD cobalt layer was deposited on-top silicon at 450°C, and after annealing the structure, Co 2 Si phase was formed. And at 800°C the high resistivity CoSi phase formed. As we continued to increase the anneal temperature to 950°C, CoSi 2 layer is formed. The high temperature required to form a silicide and the non existence of the Co 2 Si phase are attributed to the oxide at the interface. It is found that cobalt silicide grew faster and deeper to the silicon, thus saving a lot of time and cost. The succeding experiments also show that cobalt silicide has better electrical properties such as sheet resistance, capacitance and electron mobility. The transistor fabrication process was simulated by using Silvaco ATHENA module and the resulting electrical characterization was simulated using ATLAS module" @default.
- W2017214160 created "2016-06-24" @default.
- W2017214160 creator A5000527233 @default.
- W2017214160 creator A5027897088 @default.
- W2017214160 creator A5037123371 @default.
- W2017214160 creator A5049304885 @default.
- W2017214160 creator A5064103847 @default.
- W2017214160 creator A5087109816 @default.
- W2017214160 date "2011-09-01" @default.
- W2017214160 modified "2023-09-24" @default.
- W2017214160 title "Cobalt silicide and titanium silicide effects on nano devices" @default.
- W2017214160 cites W2058853065 @default.
- W2017214160 cites W2109647217 @default.
- W2017214160 cites W2128946500 @default.
- W2017214160 cites W2148609580 @default.
- W2017214160 cites W2521668196 @default.
- W2017214160 doi "https://doi.org/10.1109/rsm.2011.6088344" @default.
- W2017214160 hasPublicationYear "2011" @default.
- W2017214160 type Work @default.
- W2017214160 sameAs 2017214160 @default.
- W2017214160 citedByCount "5" @default.
- W2017214160 countsByYear W20172141602013 @default.
- W2017214160 countsByYear W20172141602015 @default.
- W2017214160 countsByYear W20172141602020 @default.
- W2017214160 crossrefType "proceedings-article" @default.
- W2017214160 hasAuthorship W2017214160A5000527233 @default.
- W2017214160 hasAuthorship W2017214160A5027897088 @default.
- W2017214160 hasAuthorship W2017214160A5037123371 @default.
- W2017214160 hasAuthorship W2017214160A5049304885 @default.
- W2017214160 hasAuthorship W2017214160A5064103847 @default.
- W2017214160 hasAuthorship W2017214160A5087109816 @default.
- W2017214160 hasConcept C123671423 @default.
- W2017214160 hasConcept C138230450 @default.
- W2017214160 hasConcept C159985019 @default.
- W2017214160 hasConcept C173118649 @default.
- W2017214160 hasConcept C191897082 @default.
- W2017214160 hasConcept C192562407 @default.
- W2017214160 hasConcept C2777855556 @default.
- W2017214160 hasConcept C2779227376 @default.
- W2017214160 hasConcept C2780901251 @default.
- W2017214160 hasConcept C49040817 @default.
- W2017214160 hasConcept C506065880 @default.
- W2017214160 hasConcept C513153333 @default.
- W2017214160 hasConcept C515602321 @default.
- W2017214160 hasConcept C525849907 @default.
- W2017214160 hasConcept C542268612 @default.
- W2017214160 hasConcept C544956773 @default.
- W2017214160 hasConceptScore W2017214160C123671423 @default.
- W2017214160 hasConceptScore W2017214160C138230450 @default.
- W2017214160 hasConceptScore W2017214160C159985019 @default.
- W2017214160 hasConceptScore W2017214160C173118649 @default.
- W2017214160 hasConceptScore W2017214160C191897082 @default.
- W2017214160 hasConceptScore W2017214160C192562407 @default.
- W2017214160 hasConceptScore W2017214160C2777855556 @default.
- W2017214160 hasConceptScore W2017214160C2779227376 @default.
- W2017214160 hasConceptScore W2017214160C2780901251 @default.
- W2017214160 hasConceptScore W2017214160C49040817 @default.
- W2017214160 hasConceptScore W2017214160C506065880 @default.
- W2017214160 hasConceptScore W2017214160C513153333 @default.
- W2017214160 hasConceptScore W2017214160C515602321 @default.
- W2017214160 hasConceptScore W2017214160C525849907 @default.
- W2017214160 hasConceptScore W2017214160C542268612 @default.
- W2017214160 hasConceptScore W2017214160C544956773 @default.
- W2017214160 hasLocation W20172141601 @default.
- W2017214160 hasOpenAccess W2017214160 @default.
- W2017214160 hasPrimaryLocation W20172141601 @default.
- W2017214160 hasRelatedWork W1519320217 @default.
- W2017214160 hasRelatedWork W1980345176 @default.
- W2017214160 hasRelatedWork W1982946238 @default.
- W2017214160 hasRelatedWork W2198717981 @default.
- W2017214160 hasRelatedWork W2277577256 @default.
- W2017214160 hasRelatedWork W2547050338 @default.
- W2017214160 hasRelatedWork W262080722 @default.
- W2017214160 hasRelatedWork W1966051944 @default.
- W2017214160 hasRelatedWork W2197778478 @default.
- W2017214160 hasRelatedWork W2248477868 @default.
- W2017214160 hasRelatedWork W2264681114 @default.
- W2017214160 hasRelatedWork W2279225582 @default.
- W2017214160 hasRelatedWork W2290597061 @default.
- W2017214160 hasRelatedWork W2296183311 @default.
- W2017214160 hasRelatedWork W2835254325 @default.
- W2017214160 hasRelatedWork W2840417066 @default.
- W2017214160 hasRelatedWork W2863681486 @default.
- W2017214160 hasRelatedWork W2927239864 @default.
- W2017214160 hasRelatedWork W3019399831 @default.
- W2017214160 hasRelatedWork W3152258356 @default.
- W2017214160 isParatext "false" @default.
- W2017214160 isRetracted "false" @default.
- W2017214160 magId "2017214160" @default.
- W2017214160 workType "article" @default.