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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2017244503> ?p ?o ?g. }

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• W2017244503 abstract "X-ray multilayer mirrors of period ranging from 9.6 to 1.7 nm, deposited using ion beam sputtering, have been examined using grazing incidence X-ray reflectivity (GIXRR) and grazing incidence X-ray diffraction. Detailed analysis of GIXRR data revealed that significant amount of re-sputtering of Si layer takes place while W deposition is underway. Re-sputtering is mainly due to bombardment of high-energy neutrals getting reflected from the W target. Due to re-sputtering interface of the multilayer becomes asymmetric. This puts a major hindrance in avoiding the intermixing and achieving sharp interfaces at shorter periods. Maximum thickness of Si which gets lost due to re-sputtering during deposition is ∼0.8 nm. The shortest period multilayer estimated, that could be deposited without intermixing, was 2.7 nm. These results are of significance for developing low period W/Si multilayers." @default.
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• W2017244503 date "2011-10-01" @default.
• W2017244503 modified "2023-10-16" @default.
• W2017244503 title "Ion beam sputter deposited W/Si multilayers: Influence of re-sputtering on the interface structure and structure modification at ultra short periods" @default.
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• W2017244503 doi "https://doi.org/10.1016/j.apsusc.2011.07.083" @default.
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