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- W2017255512 abstract "Two different deembedding methods, including open-short method and open-short-load+c deembedding method are discussed in this paper. These deembedding techniques are used to remove all parasitic elements of the device. Comparisons between open-short-load+c and open-short method were made using measured and simulated data on InP HEMT. The results indicate that better accuracy is achieved using open-short-load+c method on high frequency." @default.
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- W2017255512 date "2014-10-01" @default.
- W2017255512 modified "2023-09-23" @default.
- W2017255512 title "On-wafer deembeedding techniques with application to HEMT devices characterization" @default.
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- W2017255512 doi "https://doi.org/10.1109/icsict.2014.7021651" @default.
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