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• W2017265413 abstract "2.2-µm-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded Al x Ga 1- x N layers. With the increase of the graded Al x Ga 1- x N layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-Al x Ga 1- x N layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1×1 cm 2 larger patterns, the device exhibits maximum drain current density of 776 mA/mm and maximum transconductance of 101 mS/mm." @default.
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• W2017265413 date "2012-02-01" @default.
• W2017265413 modified "2023-10-16" @default.
• W2017265413 title "Effect of Graded Al_xGa_1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates" @default.
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• W2017265413 doi "https://doi.org/10.1143/jjap.51.025505" @default.
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