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- W2017266275 abstract "Photothermal reflectance (PTR) measurements on phosphorus implanted and annealed silicon wafers are reported. The ability to measure the dependence of the photothermal signal on doping and annealing temperature is discussed. The great sensitivity of the PTR technique on the short and long range disorder as well as on the residual defects, in combination with its nondestructive nature make this technique very promising toward the thermal and optoelectronic characterization of implanted and annealed wafers. Furthermore, PTR measurements have been proved to be very sensitive in the study of the annihilation process of defects." @default.
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- W2017266275 title "Photothermal reflectance investigation of implanted silicon: The influence of thermal annealing" @default.
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- W2017266275 doi "https://doi.org/10.1063/1.113752" @default.
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