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- W2017266870 abstract "The effect of traps due to lattice mismatch between GaAs and InP materials on the reverse current of Schottky diodes is demonstrated by the temperature dependence of the current, which exhibits a S.R.H. component at low reverse bias (also present in GaAs/GaAs with activation energy 0.125 eV) and a trap assisted tunneling one at high reverse bias (not observed in GaAs/GaAs). A model is developed which takes into account the temperature and channel doping level dependence. Application of this model to 0.25 micrometers gate GaAs MESFETs gives a good agreement with gate leakage current behavior as a function of drain and gate bias, for 6 X 10 17 cm -3 and 10 18 cm -3 channel doping. The excess gate-drain assisted tunneling current in 10 18 cm -3 doped channel does not affect the MESFETs dc and microwave performances. However, the microwave noise (Fmin) is increased." @default.
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- W2017266870 date "1993-11-19" @default.
- W2017266870 modified "2023-09-23" @default.
- W2017266870 title "Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates" @default.
- W2017266870 doi "https://doi.org/10.1117/12.162759" @default.
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