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• W2017268196 abstract "The systematical low-temperature (4.2 K) photoluminescence (PL) study of the formation kinetics of optically active centers in H and He implanted CZ Si, annealed in the temperature range of 200–1000°C is presented. The samples were implanted with H (energy E=80 keV, dose D=1015/1016 cm−2) and He (E=150 keV, D=5×1014 cm−2) ions. It was found that the annealing of H or He implanted samples leads to the appearance and evolution of a number of zero-phonon lines as well as of broad bands. The origin of the observed lines and bands is discussed. It is assumed that the strong stresses around hydrogen-related structural defects (voids, bubbles) during the annealing at 500–700°C of H implanted Si lead to the formation of a specific optical center M′ (∼1.012 eV PL line)." @default.
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• W2017268196 date "2001-12-01" @default.
• W2017268196 modified "2023-09-30" @default.
• W2017268196 title "Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing" @default.
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• W2017268196 doi "https://doi.org/10.1016/s0921-4526(01)00687-1" @default.
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