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- W2017286031 abstract "We have investigated the optical properties of violet InxGa1–xN/InyGa1–yN multiple quantum well laser diode structures grown on sapphire and GaN substrates by means of photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy. The PL result shows a red-shift behavior of the emissions from GaN capping layer and the 10-nm-thick InyGa1–yN barriers on the GaN substrate due to the reduction of residual compressive strain. On the other hand, we have observed a blue shift of the PL emission from the 4-nm-thick InxGa1–xN wells for the samples grown on GaN substrates. This can be attributed to the reduction of strain-induced piezoelectric field between InxGa1–xN wells and InyGa1–yN barriers due to the direct growth on GaN substrates, which is confirmed by a reduction of the Stokes-like shift between InxGa1–xN PL and its absorption edge and a decrease in overall decay lifetimes for the samples grown on GaN substrates. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2017286031 date "2006-06-01" @default.
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- W2017286031 title "Comparative optical studies on violet InGaN quantum well laser diode structures grown on sapphire and GaN substrates" @default.
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- W2017286031 doi "https://doi.org/10.1002/pssc.200565351" @default.
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