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- W2017287358 abstract "Epitaxial 4H-SiC has been irradiated at 150 K with 1.1 MeV Al-2(2+) molecular ions to fluences ranging from 1.5 x 10(13) to 8.00 x 10(14) Al+ cm(-2). The evolution and isochronal recovery of the bu ..." @default.
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- W2017287358 date "2002-10-01" @default.
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- W2017287358 title "Evolution and recrystallization of buried amorphous layers in Al22+ implanted 4H-SiC" @default.
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- W2017287358 doi "https://doi.org/10.1016/s0168-583x(02)01136-9" @default.
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