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• W2017289849 abstract "As the candidate for the low Schottky barrier material for n-type silicon, physical and electrical properties of yttrium and its silicide were investigated. In order to prevent both Si surface and easily-oxidized low work function metals from being oxidized, N2 sealed cleaning and transfer system and capping layer on low work function metals were employed. Fabricated Al/Y/p-type silicon Schottky barrier diode showed an excellent n-value. The extracted Schottky barrier height for electrons of yttrium silicide is as low as 0.3 eV. This result can be applied to form low contact resistivity silicide/n-type silicon contact, and contribute to lower the parasitic source drain series resistance of metal–oxide–semiconductor devices." @default.
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• W2017289849 date "2008-04-25" @default.
• W2017289849 modified "2023-10-02" @default.
• W2017289849 title "Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon" @default.
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• W2017289849 doi "https://doi.org/10.1143/jjap.47.3138" @default.
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