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- W2017328719 abstract "Abstract We report the creation of 50 nm thick epitaxial Cu lines with line widths ranging from 20 nm to 120 nm on Si(100) substrate using a combination of electron beam lithography, oblique angle deposition, and lift-off techniques. The increase of measured resistivity as a function of decreasing line width is dominated by surface scattering that is completely diffuse. The measured resistivity of the 20 nm wide lines is ~ 4 μΩ-cm." @default.
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- W2017328719 date "2012-07-01" @default.
- W2017328719 modified "2023-09-24" @default.
- W2017328719 title "Resistivity of sub-50 nm copper lines epitaxially grown on Si(100) substrate" @default.
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- W2017328719 doi "https://doi.org/10.1016/j.tsf.2012.05.070" @default.
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