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- W2017337181 abstract "Based on micrographic evidence, thermodynamic data, and quantitative analysis, we show that the predominant origins of oval defects in GaAs-related molecular-beam epitaxy are particulates on the wafer surface and Ga2O3 in the Ga melt. Both sources can be traced to contamination in the wafer preparation environment and in the Ga melt used, respectively. Substrate defects are also found to induce the formation of oval defects under improper growth conditions. We propose a thermodynamic mechanism, which explains how Ga2O3 in the Ga melt can lead to the formation of oval defects on the epilayer surface." @default.
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- W2017337181 date "1987-05-01" @default.
- W2017337181 modified "2023-09-23" @default.
- W2017337181 title "Ga2O3 and particulates: The origins of oval defects in GaAs-related molecular-beam epitaxy" @default.
- W2017337181 doi "https://doi.org/10.1116/1.583772" @default.
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