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- W2017344416 abstract "We have calculated the free-carrier absorption percentage of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ's), by considering multiple photon process and conduction-valence interband impact ionization within the extended balance-equation theory. In the calculations we have included the electron-acoustic-phonon scattering, electron-polar-optical-phonon scattering, and elastic scattering both from the remote charged impurities and from the background impurities, and as many as needed hole subbands and multiphoton channels are self-consistently taken into account for getting a required accuracy. It is indicated that the THz radiation with a larger amplitude ${E}_{mathrm{ac}}$ or a lower frequency ${f}_{mathrm{ac}}$ has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at ${f}_{mathrm{ac}}=0.64mathrm{THz}.$" @default.
- W2017344416 created "2016-06-24" @default.
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- W2017344416 date "2003-02-07" @default.
- W2017344416 modified "2023-10-16" @default.
- W2017344416 title "Multiphoton-assisted absorption of terahertz radiation in InAs/AlSb heterojunctions" @default.
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- W2017344416 doi "https://doi.org/10.1103/physrevb.67.085309" @default.
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