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- W2017357576 abstract "The annealing effects of As-ion-implanted (211)B CdTe films grown by molecular beam epitaxy have been studied by resonant Raman scattering and photoluminescence spectroscopy. The Raman intensity ratio of 2LO to 1LO phonon modes and the normalized bound-exciton emission intensity indicate that better removal of the implantation-induced damage is obtained with an increase of the annealing temperature beyond , whereas the lattice perfection drops sharply when is higher than . With an increase of in the studied range, more and more As atoms occupy the Te sites as acceptors and the samples behave in a p-type manner with a decreasing compensation coefficient and an increasing hole concentration." @default.
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- W2017357576 date "1996-08-14" @default.
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- W2017357576 title "Annealing effects of -implanted CdTe epilayers" @default.
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- W2017357576 doi "https://doi.org/10.1088/0022-3727/29/8/015" @default.
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