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- W2017386128 abstract "We grew epitaxial layers on 3-inch epitaxial wafers with a vicinal off-angle, using a horizontal hot-wall chemical vapor deposition system that had a reactor capacity of 3 x 150 mm. Uniformity (σ/mean) of thickness and carrier concentration as small as 1.7% and 5.6%, respectively, were successfully obtained. We succeeded in decreasing triangular surface defects and polytype inclusions by increasing the growth temperature and lowering the C/Si ratio. In addition, I-V characteristics of Schottky barrier diodes on an epitaxial layer showed that a high blocking voltage of 960 V and a low leakage current of less than 1 x 10-6 A/cm2 were obtained with a yield of 78%." @default.
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- W2017386128 date "2013-01-01" @default.
- W2017386128 modified "2023-09-23" @default.
- W2017386128 title "The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle" @default.
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- W2017386128 doi "https://doi.org/10.4028/www.scientific.net/msf.740-742.193" @default.
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