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- W2017389433 abstract "Photoluminescence of Ar+ implanted porous silicon and porous structure of Ar+-implanted silicon (porous silicon by preanodization ion implantation) at energy of middle-energy (30keV) are investigated to gain insight into the photoluminescence properties and photoluminescence mechanism. The results show that the photoluminescence intensity of Ar+ implanted porous silicon was reduced, which was attributed to the removal of surface oxygen and creation of defects that act as nonradiative recombination; And whether samples were prepared by p-type or n-type silicon wafers, the photoluminescence intensity of porous structure of Ar+-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and oxygen-related defects were increased." @default.
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- W2017389433 date "2008-11-13" @default.
- W2017389433 modified "2023-10-17" @default.
- W2017389433 title "The effect of argon ion implantation and preanodization argon ion implantation on photoluminescence of porous silicon" @default.
- W2017389433 doi "https://doi.org/10.1117/12.803095" @default.
- W2017389433 hasPublicationYear "2008" @default.
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