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- W2017399824 abstract "Noise and transport properties of state-of-the-art AlGaN/GaN high electron mobility transistor (HEMT) heterostructures are analyzed with respect to high-frequency oscillator applications for different dissipated powers. The phase noise of a monolithic microwave integrated circuit oscillator based on the best choice AlGaN/GaN HEMT amplifier was investigated. A low level of the phase noise of the oscillator was registered. The up-conversion factor was found to be as low as 15 MHz/V for a frequency offset of 100 KHz, demonstrating that AlGaN/GaN HEMTs offer an excellent potential for a wide range of microwave applications." @default.
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- W2017399824 date "2007-06-01" @default.
- W2017399824 modified "2023-09-23" @default.
- W2017399824 title "Low-Noise Microwave Devices: AlGaN/GaN High Electron Mobility Transistors and Oscillators" @default.
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- W2017399824 doi "https://doi.org/10.1109/msmw.2007.4294574" @default.
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