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- W2017402829 abstract "We report the observation of electroluminescence from the first to fourth quantum wells (QWs) from the <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>p</i> -GaN layer in InGaN/GaN multiple-QW light-emitting diodes (LEDs) with various indium contents (4%-16%) in each QW. The investigated LED sample showed a lower turn-on voltage and ideality factor as well as a reduction of etching pit density compared with the reference sample. Also, the X-ray reciprocal space maps revealed a partial strain relaxation in the active region. The enhanced hole injection efficiency was attributed to the weakening of strain-induced polarization field in the QWs and the good crystalline quality." @default.
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- W2017402829 date "2013-04-01" @default.
- W2017402829 modified "2023-09-23" @default.
- W2017402829 title "Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes" @default.
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- W2017402829 doi "https://doi.org/10.1109/jdt.2012.2225091" @default.
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