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• W2017403668 abstract "This paper presents the first parameterized, SPICE-compatible compact model of a Graphene Nano-Ribbon Field-Effect Transistor (GNRFET) with doped reservoirs that also supports process variation. The current and charge models closely match numerical TCAD simulations. In addition, process variation in transistor dimension, edge roughness, and doping level in the reservoir are accurately modeled. Our model provides a means to analyze delay and power of graphene-based circuits under process variation, and offers design and fabrication insights for graphene circuits in the future. We show that edge roughness severely degrades the advantages of GNRFET circuits; however, GNRFET is still a good candidate for low-power applications." @default.
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• W2017403668 date "2013-03-18" @default.
• W2017403668 modified "2023-10-16" @default.
• W2017403668 title "A SPICE-compatible model of graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation" @default.
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• W2017403668 doi "https://doi.org/10.5555/2485288.2485711" @default.
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