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- W2017404760 abstract "For the first time, photo-CVD of transparent and conducting SnO 2 films has been achieved under irradiation by a low-pressure Hg lamp. It was confirmed that both resonance lines (254 nm, 185 nm) are effective for the activation of CVD-sources (O 2 , SnCl 4 , SbCl 5 ). The structural, electrical and optical properties of undoped and Sb-doped SnO 2 films prepared by the photo-CVD method were evaluated. Resistivity as low as 5.48×10 -3 ohm·cm with high optical transmission (80%) was obtained in Sb-doped SnO 2 films (80 nm in thickness)." @default.
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- W2017404760 date "1987-03-01" @default.
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- W2017404760 title "Low-Temperature Growth of Transparent and Conducting Tin Oxide Film by Photo-Chemical Vapor Deposition" @default.
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- W2017404760 doi "https://doi.org/10.1143/jjap.26.l186" @default.
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