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- W2017444880 abstract "Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum well (MQW) lasers was performed by using entirely organic compounds as precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) and organic doping sources were used. The quality of the hetero-interfaces was investigated by means of photoluminescence (PL) and transmission electron microscopy (TEM). The difference between the cases using TBP and PH3 was described, focusing on the waiting time dependence of the hetero-interface quality. The PL FWHM measured at 4.2 K was as small as 6.1 meV with optimized growth conditions, and the TEM images also proved excellent hetero-interfaces of the MQW structure grown with TBAs and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW lasers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold current density of 710 A/cm2, an internal loss of 15 cm-1 and an internal quantum efficiency of 70%." @default.
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- W2017444880 date "1994-12-01" @default.
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- W2017444880 title "Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources" @default.
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- W2017444880 doi "https://doi.org/10.1016/0022-0248(94)91158-4" @default.
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