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• W2017459416 abstract "Potentiostatic experiments in KOH solution were used to investigate the photoetching of the Ga-polar face of heteroepitaxial GaN layers grown on sapphire. Different etching regimes are identified; these depend on the applied potential, KOH concentration, light intensity and electron concentration. In particular, the importance of the relative rates of transport of photogenerated holes and OH− ions to the surface for the etching kinetics and morphology is demonstrated. Consequently, the hydrodynamics of the etching system are important. These results form the basis for a comparison with a more widely used approach: photoenhanced open-circuit etching with a counter electrode." @default.
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• W2017459416 date "2005-01-01" @default.
• W2017459416 modified "2023-10-01" @default.
• W2017459416 title "An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology" @default.
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• W2017459416 doi "https://doi.org/10.1016/j.jcrysgro.2004.09.029" @default.
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