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- W2017462297 abstract "Abstract In this paper, we present a top–down fabrication method of single-crystal silicon nanowires. The method employs the popular photolithography technique and etching-rate dependent on the crystal orientation of single-crystal silicon in KOH solution. Using surface wet adhesion and reduced silicon dioxide etching, nanoscale SiO 2 mask line patterns with width from 45 nm to 200 nm and length up to 120 µm are successfully patterned. The interspace between nanoscale SiO 2 mask lines is 750 nm, which is narrower than the 1.2 µm feature resolution of obtainable photolithography process. A mechanism for explaining the creation of nanoscale SiO 2 mask lines based on surface wet adhesion due to the capillary force is suggested and discussed. The single-crystal silicon nanowires have been successfully fabricated by transferring the nanoscale SiO 2 mask line patterns into the top silicon layer of SOI wafer by KOH anisotropic wet-chemical etching." @default.
- W2017462297 created "2016-06-24" @default.
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- W2017462297 date "2015-08-01" @default.
- W2017462297 modified "2023-09-27" @default.
- W2017462297 title "Fabrication of single-crystal silicon nanowires based on surface wet adhesion" @default.
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- W2017462297 doi "https://doi.org/10.1016/j.matlet.2015.03.108" @default.
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