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- W2017477615 abstract "The authors report epitaxial growth of GaInN/GaN heterostructures on ZnO/c-sapphire and ZnO/r-sapphire substrates by using metal-organic chemical-vapor deposition and chemical lift-off by etching away the ZnO templates. Using a black-wax technique and a vapor wax-elimination method, they demonstrate a 10×10 mm2 crack-free lift-off of GaInN/GaN from the c-sapphire substrate followed by bonding to a glass holder. On the ZnO/r-sapphire substrate, with the same lift-off processing, the GaInN/GaN was regularly cracked along its c-axis and the cracking is independent of the etching rate (controlled by the solution density). The cracking mechanism is investigated and discussed based on the x-ray diffraction and Raman-scattering characterizations before and after lift-off." @default.
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- W2017477615 date "2010-06-17" @default.
- W2017477615 modified "2023-10-06" @default.
- W2017477615 title "Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c- and r-sapphire substrates employing ZnO sacrificial templates" @default.
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- W2017477615 doi "https://doi.org/10.1116/1.3443220" @default.
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