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- W2017477632 abstract "We have investigated the effect of a Mo interlayer on the electrical properties of Ni-silicided n + /p diodes and n+ poly-Si gate electrodes. It is shown that the use of the Mo interlayer results in reduction of the reverse leakage current of the Ni-silicided n + /p diodes. It is also shown that the interlayer effectively serves as a barrier to the in-diffusion of interconnection Al, leading to the formation of the uniform silicide layer. It is further shown that the Ni-silicided poly-Si gate electrodes with the interlayers produce similar equivalent oxide thickness and a positive shift of flatband voltage (V FB ), compared to the samples without the interlayers. Secondary ion mass spectroscopy results show that Ni is segregated at the poly-Si/SiO 2 interface and the Mo interlayer affects the redistribution of phosphorus." @default.
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- W2017477632 date "2007-01-01" @default.
- W2017477632 modified "2023-10-02" @default.
- W2017477632 title "Effect of a Mo Interlayer on the Electrical Properties of Ni-Silicided n[sup +]∕p Diode and n[sup +] Poly-Si Gate Electrode" @default.
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- W2017477632 doi "https://doi.org/10.1149/1.2756972" @default.
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