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- W2017486088 abstract "Single crystals of AgGaSe2 were grown by the Chemical Vapor Transport (CVT) -method using iodine as transport agent. Growth temperatures of 770°C and concentrations of the transport agent of 1.6–1.7 mg I2/cm3 yielded compact single crystals with a size of up to 8 X 5 X 5 mm3 and a habitus dominated by the {112}-faces. The as-grown crystals were highly insulating (σ < 10−8(Ω cm)−1). Annealing of the crystals in vacuum at 700°C resulted in n-type conductivity of 2 · 10−1 (Ω cm)−1 with a dominant peak in the photoluminescence spectra at 4 K associated with a donor level of 164 meV. Annealing in Se-atmosphere at 600°C lead to p-type conductivity of 6 · 10−6 (Ωcm)−1 within a surface layer of the AgGaSe2 single crystals. The corresponding photoluminescence spectra and the activation energy of the electrical conductivity (between 100 K and 300 K) suggest the presence of an acceptor (Vcation) with an activation energy of 60 meV and a donor (VSe) with an activation energy of 100 meV." @default.
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- W2017486088 date "1996-10-01" @default.
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- W2017486088 title "CVT-growth of AgGaSe2 single crystals: Electrical and photoluminescence properties" @default.
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- W2017486088 doi "https://doi.org/10.1016/0927-0248(96)00007-4" @default.
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