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- W2017486810 abstract "Backside sample preparation is a well known method to help circumvent undesired effects and artifacts in the analysis of a sample or device structure. However it remains challenging in the case of thin layers analysis since only a fraction of the original sample must remain while removing all of the substrate and maintaining a smooth and flat surface suitable for analysis. Here we present a method adapted to the preparation of ultra thin layers grown on pure Si substrates. It consists in a mechanical polishing up to a few remaining microns, followed by a dedicated wet etch. This method can be operated in a routine fashion and yields an extremely flat and smooth surface, without any remaining Si from substrate. It therefore allows precise analysis of the layers of interests with various characterization techniques." @default.
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- W2017486810 date "2011-01-01" @default.
- W2017486810 modified "2023-10-16" @default.
- W2017486810 title "Ultimate Backside Sample Preparation For Ultra Thin High-k∕Metal Gate Stack Characterization" @default.
- W2017486810 doi "https://doi.org/10.1063/1.3657885" @default.
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