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• W2017495532 startingPage "365202" @default.
• W2017495532 abstract "A first-principles study of the electronic structures and dielectric properties of Si/SiO(2) interfaces is implemented. Comparing the interfaces with and without defects, we explore the relationship between the defects and the dielectric properties, and also discuss the effect of the defects on the leakage current between the gate electrode and silicon substrate. We found that the electrons around the Fermi level percolate into the SiO(2) layers, which reduces the effective oxide thickness and is expected to enhance the leakage current. The dangling bonds largely affect the dielectric properties of the interface and the termination of dangling bonds by hydrogen atoms is successful in suppressing the increase of the dielectric constant." @default.
• W2017495532 created "2016-06-24" @default.
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• W2017495532 date "2007-08-24" @default.
• W2017495532 modified "2023-09-27" @default.
• W2017495532 title "First-principles study of the electronic structures and dielectric properties of the Si/SiO2interface" @default.
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• W2017495532 doi "https://doi.org/10.1088/0953-8984/19/36/365202" @default.
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