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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2017505325> ?p ?o ?g. }

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• W2017505325 abstract "InAs quantum dot (QD) formation on InP(001) has been investigated by gas source molecular beam epitaxy as a function of the substrate misorientation, arsenic pressure and temperature. A large improvement on quantum dot shape and density was obtained thanks to the use of substrates misoriented toward the [110] direction and low arsine flow rate. Round-shaped small QDs (diameter: 26 nm) in high density (9×1010 QDs/cm2) have been achieved using optimized growth conditions. Room temperature laser emission around 1.55 µm from was obtained with a threshold current density of 1 kA/cm2 for 1 mm long cavity." @default.
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• W2017505325 date "2009-07-06" @default.
• W2017505325 modified "2023-10-15" @default.
• W2017505325 title "Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 µm" @default.
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• W2017505325 doi "https://doi.org/10.1143/jjap.48.070204" @default.
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